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PRODUCT INFORMATION 750nm 1A354 850nm High-Performance PIN The very high speed and low capacitance of this GaAs PIN Photodiode makes it ideal for datacom and general purpose applications. Its double-lens optical system is designed for singlemode fiber as well as for multimode fiber with core diameter up to 62.5m. And a reverse voltage of only 5 Volts makes interfacing to a preamplifier easy. Datacom, General Purpose Optical and Electrical Characteristics PARAMETER SYMBOL MIN. TYP . MAX. UNIT (25 C Case Temperature) TEST CONDITION Responsivity Bandwidth (Fig.1&2) (Table 1) R fc C Id 0.35 0.45 1 1 0.4 2 1 A/W GHz pF nA =850nm RL=50 f=1MHz Capacitance (Fig. 4) Dark Current Operating Conditions: VR=5V. Fiber: Single-mode to multimode 62.5/125m. Absolute Maximum Ratings PARAMETER SYMBOL LIMIT Storage Temperature Operating Temperature Reverse Voltage Soldering Temperature (2mm from the case for 10 sec) Tstg Top VR Tsld -55 to +125 C -55 to +125 C 30V 260 C Thermal Characteristics O4.7 O1.5 0.6 PARAMETER SYMBOL MIN. TYP. MAX. UNIT Temperature Coefficient - Dark Current dId/dTj 5 %/ C 3.7 14 0.4 CATHODE 2.5 5.4 BOTTOM VIEW The diode chip is isolated from the case. TO-46 Package With Lens 12627.11 1998-02-04 All dimensions in mm ANODE CASE Europe: Tel (46) 8 58 02 45 00 Fax (46) 8 58 02 01 10 Tel (44) 1291 436180 Fax (44) 1291 436771 America: Tel 1-800-96MITEL Fax (613) 592-6909 Asia: Tel (65) 293 5312 Fax (65) 293 8527 High-Performance PIN 850nm 1A354 750nm Typical Responsivity Core Diameter/Cladding Diameter Numerical Aperture 10/125 m 0.11 50/125 m 0.20 62.5/125 m 0.275 % 100 FIGURE 1 % 100 FIGURE 2 80 80 0.45 A/W Table 1 0.45 A/W 0.45 A/W 60 RELATIVE RESPONSIVITY RELATIVE RESPONSIVITY 60 40 40 r 20 r = opt. Oc = 62.5m z r 20 z = opt. Oc = 62.5m z 0 0.5 1.0 1.5 2.0 2.5 3.0 mm 0 0 20 40 60 80 120 m z - AXIAL DISPLACEMENT OF FIBER r - RADIAL DISPLACEMENT OF FIBER % 100 FIGURE 3 pF 2.0 FIGURE 4 RELATIVE RESPONSIVITY 50 CAPACITANCE 700 1.0 0 600 800 900 1000 nm 0 0 5 10 V WAVELENGTH REVERSE VOLTAGE |
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