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 PRODUCT INFORMATION
750nm 1A354 850nm High-Performance PIN
The very high speed and low capacitance of this GaAs PIN Photodiode makes it ideal for datacom and general purpose applications. Its double-lens optical system is designed for singlemode fiber as well as for multimode fiber with core diameter up to 62.5m. And a reverse voltage of only 5 Volts makes interfacing to a preamplifier easy.
Datacom, General Purpose
Optical and Electrical Characteristics
PARAMETER SYMBOL MIN. TYP . MAX. UNIT
(25 C Case Temperature) TEST CONDITION
Responsivity Bandwidth
(Fig.1&2) (Table 1)
R fc C Id
0.35 0.45 1 1 0.4 2 1
A/W GHz pF nA
=850nm RL=50 f=1MHz
Capacitance (Fig. 4) Dark Current
Operating Conditions: VR=5V. Fiber: Single-mode to multimode 62.5/125m.
Absolute Maximum Ratings
PARAMETER SYMBOL LIMIT
Storage Temperature Operating Temperature Reverse Voltage Soldering Temperature (2mm from the case for 10 sec)
Tstg Top VR Tsld
-55 to +125 C -55 to +125 C 30V 260 C
Thermal Characteristics
O4.7 O1.5 0.6
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Temperature Coefficient - Dark Current
dId/dTj
5
%/ C
3.7
14
0.4
CATHODE
2.5 5.4 BOTTOM VIEW
The diode chip is isolated from the case.
TO-46 Package With Lens
12627.11 1998-02-04
All dimensions in mm
ANODE
CASE
Europe: Tel (46) 8 58 02 45 00 Fax (46) 8 58 02 01 10 Tel (44) 1291 436180 Fax (44) 1291 436771
America: Tel 1-800-96MITEL Fax (613) 592-6909 Asia: Tel (65) 293 5312 Fax (65) 293 8527
High-Performance PIN 850nm
1A354
750nm
Typical Responsivity
Core Diameter/Cladding Diameter Numerical Aperture
10/125 m 0.11 50/125 m 0.20 62.5/125 m 0.275
%
100
FIGURE 1
%
100
FIGURE 2
80
80
0.45 A/W
Table 1
0.45 A/W
0.45 A/W
60
RELATIVE RESPONSIVITY
RELATIVE RESPONSIVITY
60
40
40
r
20
r = opt. Oc = 62.5m z
r
20
z = opt. Oc = 62.5m z
0 0.5 1.0 1.5 2.0 2.5 3.0 mm
0 0 20 40 60 80 120 m
z - AXIAL DISPLACEMENT OF FIBER
r - RADIAL DISPLACEMENT OF FIBER
%
100
FIGURE 3
pF
2.0
FIGURE 4
RELATIVE RESPONSIVITY
50
CAPACITANCE
700
1.0
0 600 800 900 1000 nm
0 0 5 10 V
WAVELENGTH
REVERSE VOLTAGE


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